NPN - MPS650, MPS651; PNP - MPS750, MPS751
Amplifier Transistors
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
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NPN - MPS650, MPS651;
PNP - MPS750, MPS751
Amplifier
Transistors
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751
VCE
Value 40 60
Unit Vdc
Collector −Base Voltage
VCB Vdc
MPS650; MPS750
60
MPS651; MPS751
80
Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C
VEB 5.0 Vdc IC 2.0 Adc PD 625 mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient VCE
200 °C/W
Thermal Resistance, Junction−to−Case
VCB
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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COLLECTOR 3
2 BASE
NPN
1 EMITTER
COLLECTOR 3
2 BASE
PNP
1 EMITTER
TO−92 CASE 29 STYLE 1
123 STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
AMPS xxx
YWW G
G
xxx = 650, 750, 651, or 751 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please download the O...
