MMVL3700T1

MMVL3700T1 High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic surface mount package for economical, high−volume consumer and industrial requirements. Features http://onsemi.com SILICON PIN SWITCHING DIODE 1 CATHODE 2 ANODE Long Reverse Recovery Time: trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction Low Series Resistance @ 100 MHz: for Optimum Reliability RS = 0.7 W (Typ) @ IF = 10 mAdc Reverse Breakdown Voltage = 200 V (Min) Pb−Free Package is Available MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 200 Unit Vdc 2 1 PLASTIC SOD−323 CASE 477 STYLE 1 20 mAdc www.DataSheet4U.com MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/°C °C/W °C 4R = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Max Unit 4R M G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If th...