Document
Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
MMUN2211 Series
COLLECTOR 3
BASE 1
R1 R2
2 EMITTER
3
1 2
SOT-23
Symbol
VCEO VCBO
IC
Value
50 50 100
Unit
Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature
1. FR-4 @ minimun pad
Symbol
PD
R θJA TJ,Tstg
Value
246 1.6 625 -65 to +150
Unit
mW mW / °C °C /W
°C
Device Marking and Resistor Values
Device
MMUN2211 MMUN2212 MMUN2213
MMUN2214
MMUN2215 MMUN2216 MMUN2230 MMUN2231
Marking
A8A, 24 A8B
A8C, 26
A8D
A8E A8F A8G A8H
R1(k)
10 22 47
10
10 4.7 1.0 2.2
R2(k)
10 22 47
47
∞ ∞
1.0 2.2
Device
MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
Marking
A8J A8K A8L A8M A8R A8U
R1(k)
4.7 4.7 22 2.2 2.2 100
R2(k)
4.7 47 47 47
∞ ∞
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1/10
Rev.B 25-Jan-07
MMUN2211 Series
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Collector-Base Cutof f Current (VCB= 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE= 50 V, IB= 0)
Emitter-Base Cutof f Current (VEB= 6.0 V, I C = 0)
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
ICBO ICEO IEBO
-
-
Collector-Base Breakdown Voltage (I C = 10 mA, I E = 0)
Collector-Emitter Breakdown Voltage (Note 2.) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 2.)
V (BR)CBO V (BR)CEO
50 50
DC Current Gain (VCE= 10 V, IC = 5.0 mA)
MMUN2211 MMUN2212
hFE
35 60
MMUN2213
80
MMUN2214
80
MMUN2215
160
MMUN2216
160
MMUN2230
3.0
MMUN2231
8.0
MMUN2232
15
MMUN2233
80
MMUN2234
80
MMUN2235
80
MMUN2238
160
MMUN2241
160
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC= 10 mA, I B = 5 mA) MMUN2230/MMUN2231 (IC= 10 mA, I B = 1 mA) MMUN2215/MMUN2216/MMUN2232
MMUN2233/MMUN2234/MMUN2235/MMUN2238
Output Voltage (on) (VCC= 5.0 V, VB= 2.5 V, RL= 1.0 kW)
(VCC= 5.0 V, VB= 3.5 V, RL= 1.0 k W) (VCC= 5.0 V, VB= 5.0 V, RL= 1.0 k W)
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
VCE(sat) VOL
-
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
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Typ Max Unit
- 100 nAdc
- 500 nAdc
-
0.5 mAdc 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1
- - Vdc - - Vdc
60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 - 0.25 Vdc
Vdc - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2 - 0.2
MMUN2211 Series
ELECTRICAL CHARACTERISTICS (TA= 25C unless otherwise noted) (Continued)
Characteristic
Symbol Min
Typ
ON CHARACTERISTICS (Note 2) (Continued)
Output Voltage (off) (VCC= 5.0 V,VB = 0.5 V ,RL= 1.0 kW) (VCC= 5.0 V, VB= 0.050 V, RL = 1.0 kW) MMUN2230 (VCC= 5.0 V, VB= 0.25 V, RL = 1.0 kW) MMUN2215 MMUN2216 MMUN2233 MMUN2238
VOH
4.9
-
Input Resistor
R1
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
7.0 10 15.4 22 32.9 47 7.0 10 7.0 10 3.3 4.7 0.7 1.0 1.5 2.2 3.3 4.7 3.3 4.7 15.4 22 1.54 2.2 1.54 2.2 70 100
Resistor Ratio
MMUN2211/MMUN2212/MMUN2213 MMUN2214 MMUN2215/MMUN2216/MMUN2238 MMUN2241 MMUN2230/MMUN2231/MMUN2232
MMUN2233 MMUN2234 MMUN2235
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1/R 2
0.8 0.17
0.8 0.055 0.38 0.038
1.0 0.21
1.0 0.1 0.47 0.047
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211
250 1 IC /IB = 10
200
0.1 150
Max -
Unit Vdc
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 21.0806
1.2 0.25
1.2 0.185 0.56 0.056
kW
TA = -25 25 75
100 50 RqJA= 625 /W
0.01
0 -50
0
50 100 150 0.001 0
20 40 60
TA , AMBIENT TEMPERATURE (5 )
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. I C
80
PD, POWER DISSIP ATION (MILLIW ATTS) VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOL TS)
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MMUN2211 Series
TYPICAELLECTRICAL CHARACTERISTICS
MMUN2212
1000
VCE = 10 V
4
TA = 75
3
25 -25
100 2
f = 1 MHz lE = 0 A TA = 25
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
1
IC, COLLECTOR CURRENT (mA)
10 1
10 100 0 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOL TAGE (VOL TS)
Figure 3. DC Current Gain
Figure 4. Output Capcitance
100 75
10
1
0.1
25 TA = -25
10 VO = 0.2 V
1
TA = -25 75
25
Vin, INPUT VOLTAGE (VOL TS)
0.01
VO = 5 V
0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOL TS)
Figure 5. Output Current vs. Input Voltage
0.1 0 10 20 30 40 50 IC , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
MMUN2211
1 IC/IB = 10
0.1
TA = -25
25
75
1000
VCE = 10 V
100
TA = 75 25 -25
0.01
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOL TS)
0.001 0
20 40 60 IC, COLLECTOR CURRENT (mA)
Figure.