STS9NF3LL

N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STS9NF3LL s s s s STS9NF3LL VDSS 30 V RDS(on) <0.019 Ω ID 9A TYPICAL RDS(on) = 0.016 Ω OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED www.DataSheet4U.com FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 30 30 ± 16 9 5.6 36 2.5 Unit V V V A A A W () Pulse width limited by safe operating area. November 2001 . 1/8 STS9NF3LL THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max 50 150 -55 to 150 °C/W °C °C ...