MHV5IC1810NR2

Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application Typical Two - Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 29 dB Power Added Efficiency — 29% IMD — - 34 dBc Driver Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105 mA, IDQ2 = 95 mA, Pout = 35 dBm, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 29 dB Spectral Regrowth @ 400 kHz Offset = - 67 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 1.1% rms Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW Output Power Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout. Features Characterized with Series Equivalent Large - Signal Impedance Parameters www.DataSheet4U.com and Common Source Scattering Parameters On - Chip Matching (50 Ohm Input, >5 Ohm Output) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) Integrated ESD Protection RoHS Compliant In Tape and Reel. R2 Suff...