N-Channel PowerTrench MOSFET
FDB8447L 40V N-Channel PowerTrench® MOSFET
February 2007
FDB8447L 40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ Fe...
Description
FDB8447L 40V N-Channel PowerTrench® MOSFET
February 2007
FDB8447L 40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ Features General Description
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant
Application
Inverter Power Supplies
D
D
G
G S TO-263AB
FDB Series
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S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C (Note 1a) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1) (Note 1a) Ratings 40 ±20 50 66 15 100 153 60 3.1 –55 to +150 mJ W °C A Units V V
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.1 40 °C/W
Package Marking and Ordering Information
Device Marking FDB8447L Device FDB8447L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units
©2007 Fairchild Semiconductor Corporation FDB8447L Rev.C
1
www.fairchildsemi.com
FDB8447L 40V N-Channel PowerTre...
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