Document
CAT24FC16
16-kb I2C Serial EEPROM FEATURES
I 400 kHz (2.5 V) and 100 kHz (1.8 V) I2C bus I 1,000,000 program/erase cycles I 100 year data retention
H
GEN FR ALO
EE
LE
A D F R E ETM
compatible
I 1.8 to 5.5 volt operation I Low power CMOS technology I 16-byte page write buffer I Industrial and extended temperature ranges I Self-timed write cycle with auto-clear
I 8-pin DIP, 8-pin SOIC, 8-pin TSSOP, 8-pin MSOP
and TDFN packages - “Green” package option available
I 256 x 8 memory organization I Hardware write protect
DESCRIPTION
The CAT24FC16 is a 16-kb Serial CMOS EEPROM internally organized as 2048 words of 8 bits each. Catalyst’s advanced CMOS technology substantially reduces device power requirements. The CAT24FC16 features a 16-byte page write buffer. The device operates via the I2C bus serial interface and is available in 8-pin DIP, 8-pin SOIC, 8-pin TSSOP, 8-pin MSOP and TDFN packages.
PIN CONFIGURATION
DIP Package (P, L)
NC NC NC VSS 1 2 3 4 8 7 6 5 VCC WP SCL SDA
BLOCK DIAGRAM
EXTERNAL LOAD
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SOIC Package (J, W)
NC NC NC VSS 1 2 3 4 8 7 6 5 VCC WP SCL SDA
VCC VSS
DOUT ACK
SENSE AMPS SHIFT REGISTERS
WORD ADDRESS BUFFERS
COLUMN DECODERS
SDA
START/STOP LOGIC
TSSOP Package (U, Y)
WP
XDEC CONTROL LOGIC
E2PROM
NC NC NC VSS
1 2 3 4
8 7 6 5
VCC WP SCL SDA
DATA IN STORAGE
MSOP Package (R, Z)
NC NC NC VSS
1 2 3 4 8 7 6 5
TDFN Package (RD4, ZD4)
SCL STATE COUNTERS
HIGH VOLTAGE/ TIMING CONTROL
VCC WP SCL SDA
VCC 1 WP 2 SCL 3 SDA 4
8 NC 7 NC 6 NC 5 VSS
PIN FUNCTIONS
Pin Name NC SDA SCL WP VCC Function No Connect Serial Data/Address Serial Clock Write Protect 1.8 V to 5.5 V Power Supply Ground
* Catalyst Semiconductor is licensed by Philips Corporation to carry the I2C Bus Protocol.
© 2004 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice.
VSS
1
Doc. No. 1054, Rev. G
CAT24FC16
Lead Soldering Temperature (10 seconds) ...... 300°C Output Short Circuit Current(2) ....................... 100 mA
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias –55°C to +125°C Storage Temperature ....................... –65°C to +150°C Voltage on Any Pin with Respect to Ground(1) ............ –2.0 V to VCC + 2.0 V VCC with Respect to Ground ............. –2.0 V to +7.0 V Package Power Dissipation Capability (TA = 25°C) .................................. 1.0 W RELIABILITY CHARACTERISTICS Symbol NEND(3) TDR
(3) (3)
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
Parameter Endurance Data Retention ESD Susceptibility Latch-up
Reference Test Method MIL-STD-883, Test Method 1033 MIL-STD-883, Test Method 1008 MIL-STD-883, Test Method 301.