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UNISONIC TECHNOLOGIES CO., LTD
2N5088/2N5089
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE ...
www.signal.com.tr
UNISONIC TECHNOLOGIES CO., LTD
2N5088/2N5089
NPN EPITAXIAL SILICON
TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA ~ 50mA.
1 TO-92
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
2N5088L-T92-B
2N5088G-T92-B
2N5088L-T92-K
2N5088G-T92-K
2N5088L-T92-R
2N5088G-T92-R
2N5089L-T92-B
2N5089G-T92-B
2N5089L-T92-K
2N5089G-T92-K
2N5089L-T92-R
2N5089G-T92-R
Note: Pin Assignment: E: Emitter B: Base C: Collector
Package
TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
Pin Assignment 123 EBC EBC EBC EBC EBC EBC
Packing
Tape Box Bulk
Tape Reel Tape Box
Bulk Tape Reel
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2N5088/2N5089
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter voltage
2N5088 2N5089
VCEO
30 25
V
Collector-Base voltage
2N5088 2N5089
VCBO
35 30
V
Emitter-Base Voltage
VEBO
4.5
V
Collector Current-Continuous
IC
100
mA
Power Dissipation Derate Above 25℃
Junction Temperature Storage Temperature
PD
TJ TSTG
625 5
150 -55 ~ +150
mW mW/℃
℃
℃
Note 1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle...