2N5088

www.signal.com.tr UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA ~ 50mA. 1 TO-92 „ ORDERING INFORMATION Order Number Lead Free Halogen Free 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R 2N5089L-T92-B 2N5089G-T92-B 2N5089L-T92-K 2N5089G-T92-K 2N5089L-T92-R 2N5089G-T92-R Note: Pin Assignment: E: Emitter B: Base C: Collector Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 123 EBC EBC EBC EBC EBC EBC Packing Tape Box Bulk Tape Reel Tape Box Bulk Tape Reel www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD 1 of 3 QW-R201-040.Ba www.signal.com.tr 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter voltage 2N5088 2N5089 VCEO 30 25 V Collector-Base voltage 2N5088 2N5089 VCBO 35 30 V Emitter-Base Voltage VEBO 4.5 V Collector Current-Continuous IC 100 mA Power Dissipation Derate Above 25℃ Junction Temperature Storage Temperature PD TJ TSTG 625 5 150 -55 ~ +150 mW mW/℃ ℃ ℃ Note 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle...