Document
UNISONIC TECHNOLOGIES CO., LTD
PZTA92/93
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.
FEATURES
* Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93)
* Complement to UTC PZTA42/43 * Collector power dissipation: PC(MAX)=1W
ORDERING INFORMATION
Ordering Number PZTA92G-AA3-R PZTA93G-AA3-R
Package
SOT-223 SOT-223
Pin Assignment 123 BCE BCE
Packing
Tape Reel Tape Reel
MARKING
PZTA92
PZTA93
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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PZTA92/93
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
PZTA92 PZTA93
VCBO
-300 -200
V V
Collector-Emitter Voltage
PZTA92 PZTA93
VCEO
-300 -200
V V
Emitter-Base Voltage Collector Current
VEBO IC
-5 -500
V mA
Collector Power Dissipation Pc 1 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0
PZTA92 PZTA93
Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB=0
PZTA92 PZTA93
Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
BVEBO ICBO IEBO
IE=-100μA, IC =0 VCB=-200V, IE=0 VCB=-160V, IE=0 VEB=-3V, IC =0
PZTA92 PZTA93
DC Current Gain (Note)
VCE=-10V, IC =-1mA hFE VCE=-10V, IC =-10mA
VCE=-10V, IC =-30mA Collector-Emitter Saturation Voltage VCE(SAT) IC =-20mA, IB=-2mA
Base-Emitter Saturation Voltage Current Gain Bandwidth Product
VBE(SAT) IC =-20mA, IB=-2mA fT VCE=-20V,Ic=-10mA, f=100MHz
Collector Base Capacitance
CCB
VCB=-20V,
IE=0,
f=1MHz
PZTA92 PZTA93
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN)
MIN -300 -200 -300 -200
-5
60 80 80
50
TYP
MAX
-0.25 -0.25 -0.10
UNIT V V V V V μA μA μA
-0.5 -0.90
6 8
V V MHz pF pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
DC Current Gain 103 VCE=-10V
102
101
100 -100
-101
-102
-103
Collector Current, IC (mA)
-104
Capacitance 102
CIB
101 CCB
-10-1
-100
-101
-102
Collector-Base Voltage, VCB (V)
103 Current Gain Bandwidth Product VCE=-20V f=100MHz
PNP SILICON TRANSISTOR
Saturation Voltage -104 IC=10*IB
VCE(SAT)
-103
VBE(SAT)
-102
-101 -100
-101
-102
-103
Collector Current, IC (mA)
-104
Active-Region Safe Operating Area -101
0.1ms 1.0ms
DC 1.5W
-101
MPSA93
TherTmCa=l2l5im°Citation
-101
MPSA92
625mW Thermal
limitation TA=25°C
bonding breakdown
-10-10 0lim0 itation
TJ=150°C
-101
-102
-103
Collector-Emitter Voltage, VCE ( V)
102
10-11 00
-101 Collector Current, IC (mA)
-102
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PZTA92/93
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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