PZTA44
NPN Silicon Planar Epitaxial Transistor
BASE 1 3 EMITTER COLLECTOR 2, 4
1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR...
PZTA44
NPN Silicon Planar Epitaxial
Transistor
BASE 1 3 EMITTER COLLECTOR 2, 4
1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR
4 1
2
3
SOT-223
Value 400 500 6 300 2 150 -55 to +150 Unit V V V mA W ˚C ˚C
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Emitter Breakdown Voltage
(IC =1mA)
Symbol
V(BR)CEO
www.DataSheet4U.com
Min
400 500 6 -
Typ
-
Max
100 500 100
Unit
V V V nA nA nA
Collector-Base Breakdown Voltage
(IC =100µA) (IE =10 µA)
V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE(sat)
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
(VCB =400V)
Collector Cutoff Current
(VCB=400V)
Emitter-Base Cutoff Current
(VEB=4V)
DC Current Gain
(VCE = (VCE = (VCE = (VCE = 10V, 10V, 10V, 10V, IC = IC = IC = IC = 1mA) 10mA) 50mA) 100mA)
40 50 45 40 -
4
300 375 750 750 6
-
Collector-Emitter Saturation Voltages
(IC = 20mA, I B = 2mA) (IC = 50mA, I B = 5mA)
mV mV pF
Base-Emitter Saturation Voltages
(IC = 10mA, I B = 1mA)
VBE(sat) Cob
Output Capacitance
(VCE = 20 Vdc, f = 1MHz)
Device Marking
PZTA44=44
WEITRON
http://www.weitron.com.tw
1/3
02-Jun-05
PZTA44
Characteristics Curve
1000 100000
Saturation Voltage (mA)
10000
100
hFE
VCE = 10V
1000 VBE(sat) @IC=10 IB 100 VCE(sat) @IC=10 IB 10
10...