PZT5551

UNISONIC TECHNOLOGIES CO., LTD PZT5551 HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain NPN SILICON TRANSISTOR *Pb-free plating product number:PZT5551L „ ORDERING INFORMATION www.DataSheet4U.com Order Number Normal Lead Free Plating PZT5551-x-AA3-F-R PZT5551L-x-AA3-F-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1of 4 QW-R207-007,D PZT5551 „ ABSOLUATE MAXIUM RATINGS (Ta = 25℃) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PC 2 W ℃ Operating Junction Temperature TJ +150 ℃ Storage Temperature TSTG -65 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL θJA RATINGS 62.5 UNIT ℃/W Thermal Resistance „ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) VBE(SAT) fT Cob NF TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=120V, IE=0 VBE=4V, Ic=0 VCE=5V, Ic=1mA VCE=5V, Ic=10mA VCE=5V, Ic=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, Ic=10mA, f=100MHz VCB=10V, IE=0, f=1MHz IC=0.25mA, VC...