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MRF6P23190HR6 Dataheets PDF



Part Number MRF6P23190HR6
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistor
Datasheet MRF6P23190HR6 DatasheetMRF6P23190HR6 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel B.

  MRF6P23190HR6   MRF6P23190HR6


MPSA94 MRF6P23190HR6 PZT4033


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