MMBT5088

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 3 1 2 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number MMBT5088G-AE3-R MMBT5089G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-23 C: Collector Pin Assignment 123 EBC EBC Packing Tape Reel Tape Reel  MARKING UTC MMBT5088 1QG UTC MMBT5089 1RG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R206-033.C MMBT5088/MMBT5089 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter voltage MMBT5088 MMBT5089 VCEO 30 25 V Collector-Base voltage MMBT5088 MMBT5089 VCBO 35 30 V Emitter-base voltage VEBO 4.5 V Collector current-continuous IC 100 mA Total Device Dissipation Linear Derating Factor above TA= 25°C PD 350 mW 2.8 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are based on a maximum junction temperature of 150 degrees C. 3. These are steady state limits. The fac...