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MC74VHC50 Dataheets PDF



Part Number MC74VHC50
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Hex Buffer
Datasheet MC74VHC50 DatasheetMC74VHC50 Datasheet (PDF)

MC74VHC50 Hex Buffer The MC74VHC50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28% VCC • Power D.

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MC74VHC50 Hex Buffer The MC74VHC50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28% VCC • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Designed for 2 V to 5.5 V Operating Range • Low Noise: VOLP = 0.8 V (Max) • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com 14−LEAD SOIC D SUFFIX CASE 751A 14−LEAD TSSOP DT SUFFIX CASE 948G 14−LEAD SOIC EIAJ M SUFFIX CASE 965 PIN CONNECTION AND MARKING DIAGRAM (Top View) VCC A6 Y6 A5 Y5 A4 Y4 14 13 12 11 10 9 8 1 A1 3 A2 5 A3 9 A4 11 A5 13 A6 2 Y1 4 Y2 6 Y3 Y=A 8 Y4 10 Y5 12 Y6 Figure 1. Logic Diagram A1 1 Y1 A2 1 Y2 A3 1 Y3 A4 1 Y4 A5 1 Y5 A6 1 Y6 Figure 2. Logic Symbol 1234567 A1 Y1 A2 Y2 A3 Y3 GND For detailed package marking information, see the Marking Diagram section on page 4 of this data sheet. FUNCTION TABLE A Input L H Y Output L H ORDERING INFORMATION Device Package Shipping MC74VHC50DG MC74VHC50MG SOIC SOIC EIAJ 55 Units/Rail 50 Units/Rail MC74VHC50DR2G SOIC 2500 Units/T&R MC74VHC50DTR2G TSSOP 2500 Units/T&R © Semiconductor Components Industries, LLC, 2011 1 May, 2011 − Rev. 5 Publication Order Number: MC74VHC50/D MC74VHC50 MAXIMUM RATINGS Symbol Parameter Value Unit VCC VIN VOUT IIK IOK IOUT ICC TSTG TL TJ qJA DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature under Bias Thermal Resistance VI < GND VO < GND (Note 1) SOIC TSSOP *0.5 to )7.0 *0.5 to )7.0 *0.5 to VCC )0.5 *20 $20 $25 $50 *65 to )150 260 )150 125 170 V V V mA mA mA mA °C °C °C °C/W MSL Moisture Sensitivity Level 1 FR VESD Flammability Rating ESD Withstand Voltage Oxygen Index: 30 to 35 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) > 2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) 2000 ILatch−Up Latch−Up Performance Above VCC and Below GND at 85°C (Note 5) $300 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC Supply Voltage 2.0 5.5 V VI Input Voltage (Note 6) 0 5.5 V VO Output Voltage (HIGH or LOW State) 0 VCC V TA Operating Free−Air Temperature *55 )125 °C Dt/DV Input Transition Rise or Fall Rate VCC = 3.0 V $0.3 V 0 VCC = 5.0 V $0.5 V 0 100 ns/V 20 6. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level. NOTE: The qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and figure below. http://onsemi.com 2 MC74VHC50 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions VCC TA = 25°C TA ≤ 85°C TA ≤ 125°C (V) Min Typ Max Min Max Min Max Unit VIH Minimum High−Level Input Voltage 2.0 1.5 3.0 2.0 4.5 3.15 5.5 3.85 1.5 1.5 V 2.0 2.0 3.15 3.15 3.85 3.85 VIL Maximum Low−Level Input Voltage 2.0 0.5 0.5 0.5 V 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 VOH Minimum High−Level VIN = VIH or VIL 2.0 1.9 2.0 1.9 1.9 V Output Voltage IOH = −50 mA 3.0 2.9 3.0 2.9 2.9 VIN = VIH or VIL 4.5 4.4 4.5 4.4 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 2.58 4.5 3.94 V 2.48 2.34 3.80 3.66 VOL Maximum Low−Level VIN = VIH or VIL 2.0 0.0 0.1 0.1 0.1 V Output Voltage IOL = 50 mA 3.0 0.0 0.1 0.1 0.1 VIN = VIH or VIL 4.5 0.0 0.1 0.1 0.1 VIN = VIH or VIL IOL = 4 mA 3.0 IOL = 8 mA 4.5 V 0.36 0.44 0.52 0.36 0.44 0.52 IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent VIN = VCC or GND 5.5 2.0 20 40 mA Supply Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0 ns) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C ÎÎÎÎÎÎÎÎÎ.


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