BCX70

UTC BCX70 GENERAL PURPOSE TRANSISTOR MARKING NPN EPITAXIAL SILICON TRANSISTOR CG 1 2 3 SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70L ABSOLUTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature SYMBOL VCBO VCEO VEBO www.DataSheet4U.com IC PC TSTG RATINGS 45 45 5 200 350 -40 ~ +150 UNIT V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted) PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time SYMBOL BVCEO BVEBO ICES IEBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NF tON tOFF TEST CONDITIONS IC=2.0mA, IB=0 IE=1.0µF, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2.0mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA, RS=2KΩ f=1KHz IC=10mA, IB1=1.0mA VBB=3.6V, IB2=1.0mA, R1=R2=5KΩ RL=990Ω MIN 45 5 TYP MAX UNIT V V nA nA 20 20 100 380 100 630 0.35 0.55 0.85 1.05 0.75 4.5 6 150 800 0.6 0.7 0.55 125 V V V V V MHz PF dB ns ns UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-080...