2SD2670

2SD2670 Transistors Low frequency amplifier 2SD2670 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 (3) 2.8 1.6 zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 250mV At lc=1.5A / lB=30mA 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 0.16 0.3 ~0.6 ROHM : TSMT3 2SD2670 Abbreviated symbol : XX (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power siddipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits Unit 15 V www.DataSheet4U.com 12 V 6 V 3 A 6 A ∗1 500 mW 1 ∗2 W 150 °C −55 to +150 °C ∗1 Single pulse, Pw=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulse Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 − − − 270 − − Typ. − − − − − 120 − 360 30 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=6V IC=1.5A, IB=30mA VCE=2V, IC=500mA ∗ VCE=2V, IE=−500mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz Rev.A 1/2 2SD2670 Transistors zPackaging specificat...