Unbuffered Inverter
MC74VHC1GU04
The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. This device consists of a single unbuffered inverter. In combination with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high–input impedance amplifier. For digital applications, the MC74VHC1G04 or the MC74VHC04 are recommended. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1GU04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1GU04 to be used to interface 5 V circuits to 3 V circuits. • High Speed: t PD = 2.5 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 105; Equivalent Gates = 26
MARKING DIAGRAMS
5 4 1 2 3
V6d
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SC–70/SC–88A/SOT–353 DF SUFFIX CASE 419A
Pin 1 d = Date Code
5 4
Figure 1. Pinout (Top View)
1 2 3
V6d
Figure 2. Logic Symbol
Pin 1 d = Date Code
SOT–23/TSOP–5/SC–59 DT SUFFIX CASE 483
FUNCTION TABLE
PIN ASSIGNMENT 1 2 3 4 5 NC IN A GND OUT Y V CC Inputs A L H Output Y H L
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
VHU4–1/4
MC74VHC1GU04
MAXIMUM RATINGS
Value Unit – 0.5 to + 7.0 V – 0.5 to +7.0 V V CC=0 – 0.5 to +7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Symbol V CC V IN V OUT Parameter
V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V
Min 2.0 0.0 0.0 – 55 0 0
Max 5.5 5.5 V CC + 125 No Limit No Limit
Unit V V V °C ns/V
Junction Temperature °C 80 90 100 110 120 130 140
Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900
Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VHU4–2/4
MC74VHC1GU04
DC ELECTRICAL CHARACTERISTICS Symbol V IH Parameter Minimum High–Level Input Voltage Test Conditions V CC (V) 2.0 3.0 4.5 5.5 V IL Maximum Low–Level Input Voltage 2.0 3.0 4.5 5.5 V OH Minimum High–Level Output Voltage V IN = V IH or V IL V IN = V IH or V IL I OH = –4 mA I OH = –8 mA V OL Maximum Low–Level Output Voltage V IN = V IH or V IL V IN = V IH or V IL I OL = 4 mA I OL = 8 mA I IN I CC Maximum Input Leakage Current Maximum Quiescent Supply Current V IN = 5.5 V or GND V IN = V CC or GND 3.0 4.5 0 to5.5 5.5 0.36 0.36
±0.1
T A = 25°C T A < 85°C –55°C