NAND512-M

NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 2 dice of 256 Mb (x16) SDR LPSDRAMs – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash +1 die of 256 Mb (x16) DDR LPSDRAM – 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or 512 Mb (x16) DDR LPSDRAM Supply voltages – VDDF = 1.7V to 1.95V or 2.5V to 3.6V – VDDD = VDDQD = 1.7V to 1.9V Electronic Signature ECOPACK® packages Temperature range – -30 to 85°C FBGA TFBGA107 10.5 x 13 x 1.2mm TFBGA149 10 x 13.5 x 1.2mm LFBGA137 10.5 x 13 x 1.4mm TFBGA137 10.5 x 13 x 1.2 mm(1) ■ (1) Preliminary specifications. ■ ■ ■ Fast Block Erase – Block erase time: 2ms (typ) www.DataSheet4U.com ■ ■ ■ Status Register Data integrity – 100,000 Program/Erase cycles – 10 years Data Retention Flash Memory ■ NAND Interface – x8 or x16 bus width – Multiplexed Address/ Data Page size – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words Block size – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words Page Read/Program – Random access: 15µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) Copy Back Program mode – Fast page copy without external buffering LPSDRAM ■ ■ ■ ■ Interface: x16 or x 32 bus width Deep Power Down mode 1.8v LVCMOS interfa...