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NAND256-M Dataheets PDF



Part Number NAND256-M
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (NANDxxx-M) NAND Flash Memories
Datasheet NAND256-M DatasheetNAND256-M Datasheet (PDF)

NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 2 dice of 256 Mb (x16) SDR LPSDRAMs – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash +1 die of 256 Mb (x16) DDR LPSDRAM – 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or 512 Mb (x16) DDR LPSDRAM.

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NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 2 dice of 256 Mb (x16) SDR LPSDRAMs – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash +1 die of 256 Mb (x16) DDR LPSDRAM – 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or 512 Mb (x16) DDR LPSDRAM Supply voltages – VDDF = 1.7V to 1.95V or 2.5V to 3.6V – VDDD = VDDQD = 1.7V to 1.9V Electronic Signature ECOPACK® packages Temperature range – -30 to 85°C FBGA TFBGA107 10.5 x 13 x 1.2mm TFBGA149 10 x 13.5 x 1.2mm LFBGA137 10.5 x 13 x 1.4mm TFBGA137 10.5 x 13 x 1.2 mm(1) ■ (1) Preliminary specifications. ■ ■ ■ Fast Block Erase – Block erase time: 2ms (typ) www.DataSheet4U.com ■ ■ ■ Status Register Data integrity – 100,000 Program/Erase cycles – 10 years Data Retention Flash Memory ■ NAND Interface – x8 or x16 bus width – Multiplexed Address/ Data Page size – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words Block size – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words Page Read/Program – Random access: 15µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) Copy Back Program mode – Fast page copy without external buffering LPSDRAM ■ ■ ■ ■ Interface: x16 or x 32 bus width Deep Power Down mode 1.8v LVCMOS interface Quad internal Banks controlled by BA0 and BA1 Automatic and controlled Precharge Auto Refresh and Self Refresh – 8,192 Refresh cycles/64ms – Programmable Partial Array Self Refresh – Auto Temperature Compensated Self Refresh Wrap sequence: sequential/interleave Burst Termination by Burst Stop command and Precharge command ■ ■ ■ ■ ■ ■ ■ ■ August 2006 Rev 5 1/23 www.st.com 2 NAND256-M, NAND512-M, NAND01G-M Table 1. Reference Product List Part Number NAND256R3M0 NAND Product 256 Mbit (x8), 1.8V 256Mbit (x16) 1.8V 256Mbit (x16) 3V LPSDRAM Product 256 Mbit SDR, (x16), 1.8V, 104MHz 256 Mbit DDR (x16) 1.8V, 133MHz 256 Mbit SDR (x16), 1.8V, 104MHz 256 Mbit SDR (x16), 1.8V, 104MHz 512 Mbit (x8), 1.8V 256 Mbit DDR (x16) 1.8V, 133MHz 512 Mbit DDR (x16) 1.8V, 133MHz 512Mbit (x8) 3V 2 x 512Mbit NAND (x8) 3V 512Mbit SDR (2x16) (2x256Mbit SDR x16) 1.8V,104Mhz 512 Mbit SDR (2x16) (2 x 256Mbit SDR x16) 1.8V, 104MHz 512Mbit SDR (x32) 1.8V, 133MHz Package TFBGA107 TFBGA149 TFBGA149 TFBGA107 TFBGA149 TFBGA149 LFBGA 137 LFBGA137 TFBGA137 NAND256-M NAND256R4M3 NAND256W3M4 NAND512R3M0 NAND512R4M3 NAND512-M NAND512R4M5 NAND512W3M2 NAND01G-M NAND01GW3M2 1 Gbit NAND (x8) 3V 2/23 NAND256-M, NAND512-M, NAND01G-M Contents Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 NAND Flash Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 LPSDRAM Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 3 4 5 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Package Mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Part Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3/23 List of tables NAND256-M, NAND512-M, NAND01G-M List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Product List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Signal Names: NAND Flash & 1 x SDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Signal Names: NAND Flash & 2 x SDR LPSDRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Signal Names - NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Mechanical Data. . . . . . 17 TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Mechanical Data. . . . . . 18 LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Mechanical Data. . . . . . . 19 TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch . . . . . . . . . . . . . . . . . . . . 20 Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4/23 NAND256-M, NAND512-M, NAND01G-M List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5.


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