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IRHE9230 Dataheets PDF



Part Number IRHE9230
Manufacturers International Rectifier
Logo International Rectifier
Description (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Datasheet IRHE9230 DatasheetIRHE9230 Datasheet (PDF)

PD - 91804D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9230 100K Rads (Si) IRHE93230 300K Rads (Si) RDS(on) 0.80 Ω 0.80 Ω ID -4.0A -4.0A IRHE9230 200V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7390U JANSF2N7390U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven .

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PD - 91804D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9230 100K Rads (Si) IRHE93230 300K Rads (Si) RDS(on) 0.80 Ω 0.80 Ω ID -4.0A -4.0A IRHE9230 200V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7390U JANSF2N7390U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.DataSheet4U.com DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. LCC - 18 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -4.0 -2.4 -16 25 0.2 ±20 171 -4.0 2.5 -27 -55 to 150 300 ( for 5s) 0.42 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 3/1/00 IRHE9230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units — -0.25 — — — — — — — — — — — — — — — 6.1 — — 0.80 0.92 -4.0 — -25 -250 -100 100 45 10 25 30 30 75 65 — V V/°C Ω V S( ) µA Ω Test Conditions VGS =0 V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -2.4A „ VGS = -12V, ID = -4.0A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -2.4A „ VDS= -160V,VGS=0V VDS = -160V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -4.0A VDS = -50V VDD = -100V, ID = -4.0A, RG = 7.5Ω BVDSS Drain-to-Source Breakdown Voltage -200 ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source — On-State Resistance — VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 2.5 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 190 45 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Œ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -4.0 -16 -5.0 400 1.6 Test Conditions A V nS µC Tj = 25°C, IS = -4.0A, VGS = 0V  Tj = 25°C, IF = -4.0A, di/dt ≥ -100A/µs VDD ≤ -25V  Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min Typ Max Units — — — 19 5.0 — °C/W Test Conditions Solder to a copper clad PC Board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHE9230 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage  Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source  On-State Resistance (TO-3) Static Drain-to-Source  On-State Resistance (LCC-18) Diode Forward V.


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