UNISONIC TECHNOLOGIES CO., LTD
DTC115T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
FE...
UNISONIC TECHNOLOGIES CO., LTD
DTC115T
NPN SILICON
TRANSISTOR
NPN DIGITAL
TRANSISTOR (BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Order Number
DTC115TG-AE3-R Note: Pin Assignment: E: Emitter B: Base
Package
SOT-23 C: Collector
Pin Assignment 123 EBC
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-063.C
DTC115T
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage Collector-emitter voltage
VCBO VCEO
50 50
V V
Emitter-base voltage Collector current
VEBO IC
5V 100 mA
Collector Power dissipation Junction temperature
PC 200 mW TJ 150 °C
Storage temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
BVCBO BVCEO
Emitter-Base Breakdown Voltage Collector Cutoff Current
BVEBO ICBO
Emitter Cutoff Current Collector-Emitter Saturation Voltage
IEBO VCE(SAT)
DC Current transfer Ratio Input Resi...