UNISONIC TECHNOLOGIES CO., LTD
DTA115E
PNP EPITAXIAL SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)
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UNISONIC TECHNOLOGIES CO., LTD
DTA115E
PNP EPITAXIAL SILICON
TRANSISTOR
PNP DIGITAL
TRANSISTOR (BUILT-IN RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit).
* The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects.
* Only the on / off conditions need to be set for operation, making device design easy.
EQUIVALENT CIRCUIT
R1 IN
R2
IN
OUT
GND (+) OUT GND (+)
ORDERING INFORMATION
Ordering Number
DTA115EG-AE3-R DTA115EG-AL3-R Note: Pin Assignment: G: GND I: IN O: OUT
Package
SOT-23 SOT-323
Pin Assignment 123 GIO GIO
Packing
Tape Reel Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R220-016.C
DTA115E
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage Input Voltage
VCC -50 V
VIN
-40~+10
V
Output Current
IOUT IC(MAX)
-20 -100
mA
Power Dissipation Junction Temperature
PD 200 mW TJ 150 °C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA...