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DTA115E

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PNP DIGITAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD DTA115E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) ...


UTC

DTA115E

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UNISONIC TECHNOLOGIES CO., LTD DTA115E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)  FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects. * Only the on / off conditions need to be set for operation, making device design easy.  EQUIVALENT CIRCUIT R1 IN R2 IN OUT GND (+) OUT GND (+)  ORDERING INFORMATION Ordering Number DTA115EG-AE3-R DTA115EG-AL3-R Note: Pin Assignment: G: GND I: IN O: OUT Package SOT-23 SOT-323 Pin Assignment 123 GIO GIO Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R220-016.C DTA115E PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage Input Voltage VCC -50 V VIN -40~+10 V Output Current IOUT IC(MAX) -20 -100 mA Power Dissipation Junction Temperature PD 200 mW TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA...




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