2SD880

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-220 Pin Assignment 123 BCE BCE Packing Tube Tube  MARKING SOT-89 TO-220 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-013.G 2SD880 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Power Dissipation SOT-89 TO-220 SOT-89 TO-220 TA=25 TC=25 PD 0.55 1.5 W 3 30 Junction Temperature TJ 150 W Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-...