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2SD879

Part Number	2SD879
Manufacturer	UTC
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Apr 13, 2007
Detailed Description	UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS  DESCRIPTION Th...
Datasheet	2SD879 PDF File

Overview

UNISONIC TECHNOLOGIES CO.
, LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.
5V, 3V STROBE APPLICATIONS  DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.
5V and 3V strobe applications.
 FEATURES * In applications where two NiCd batteries are used to provide 2.
4V, two 2SD879s are used.
* The charge time is approximately 1 second faster than that of germanium transistors.
* Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted.
* Large current capacity and highly resistant to break-down.
* Excellent linearity of hFE in the region from low current to high current.
 ORDERING INFORMATION Ord...

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