Document
UNISONIC TECHNOLOGIES CO., LTD
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage VCE(SAT)=0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2SC3669G-x-AA3-R
- 2SC3669G-x-AB3-R
2SC3669L-x-TM3-T
2SC3669G-x-TM3-T
2SC3669L-x-TN3-R
2SC3669G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-223 SOT-89 TO-251 TO-252
Pin Assignment 123 BCE BCE BCE BCE
Packing
Tape Reel Tape Reel
Tube Tape Reel
MARKING
SOT-223
SOT-89
TO-251 / TO-252
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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PIN ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO 80 V VCEO 80 V
Emitter-Base Voltage Collector Current
VEBO 5 V IC 2 A
Base Current Collector Power Dissipation
SOT-223/SOT-89 TO-251/TO-252
IB PC
1A 0.5 W 1W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
SYMBOL V(BR)CEO
ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob
TEST CONDITIONS IC= 10mA, IB= 0 VCB=80V, IE= 0 VEB= 5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB= 10V, IE= 0, f=1MHz
MIN TYP MAX UNIT 80 V
1.0 μA 1.0 μA 70 240 40 0.15 0.5 V 0.9 1.2 V 100 MHz 30 pF
Turn-on Time
tON
0.2 μs
Switching Time Storage Time
TSTG
Fall Time
CLASSIFICATION OF hFE1
RANK RANGE
tf
IB1= -IB2=0.05A DUTY CYCLE ≤ 1%
O 70~140
1.0 0.2
Y 120~240
μs μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS (Cont.)
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems whe.