DatasheetsPDF.com

2SC3669 Dataheets PDF



Part Number 2SC3669
Manufacturers UTC
Logo UTC
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet 2SC3669 Datasheet2SC3669 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SC3669G-x-AA3-R - 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-223 SOT-89 TO-25.

  2SC3669   2SC3669



Document
UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SC3669G-x-AA3-R - 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-223 SOT-89 TO-251 TO-252 Pin Assignment 123 BCE BCE BCE BCE Packing Tape Reel Tape Reel Tube Tape Reel  MARKING SOT-223 SOT-89 TO-251 / TO-252 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-015.D 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR  PIN ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 80 V VCEO 80 V Emitter-Base Voltage Collector Current VEBO 5 V IC 2 A Base Current Collector Power Dissipation SOT-223/SOT-89 TO-251/TO-252 IB PC 1A 0.5 W 1W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range and assured by design from –20°C~85°C.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL V(BR)CEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC= 10mA, IB= 0 VCB=80V, IE= 0 VEB= 5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB= 10V, IE= 0, f=1MHz MIN TYP MAX UNIT 80 V 1.0 μA 1.0 μA 70 240 40 0.15 0.5 V 0.9 1.2 V 100 MHz 30 pF Turn-on Time tON 0.2 μs Switching Time Storage Time TSTG Fall Time  CLASSIFICATION OF hFE1 RANK RANGE tf IB1= -IB2=0.05A DUTY CYCLE ≤ 1% O 70~140 1.0 0.2 Y 120~240 μs μs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R209-015.D 2SC3669  TYPICAL CHARACTERISTICS NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R209-015.D 2SC3669  TYPICAL CHARACTERISTICS (Cont.) NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems whe.


2SC3648 2SC3669 2SC3834


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)