2SC3468

UNISONIC TECHNOLOGIES CO., LTD 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS  FEATURES * High breakdown voltage: VCBO, VCEO≧300V * Small reverse transfer capacitance and excellent high frequency characteristicF  ORDERING INFORMATION Ordering Number 2SC3468G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-037.B 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-to-Base Voltage Collector-to-Emitter Voltage VCBO VCEO 300 300 V V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) Collector Dissipation ICP PC 200 mA 1.0 W Junction Temperature TJ 0 ~ +125 °C Storage Temperature TSTG -65 ~ +125 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range and assured by design from –20°C ~85°C.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Ga...