2SC2881

UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS  FEATURES * High voltage: VCEO=120V * High transition frequency: fT=120MHz(typ.) * Complementary to 2SA1201 1 SOT-89  ORDERING INFORMATION Ordering Number 2SC2881G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-032.C 2SC2881 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 500 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 ~ 150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance SYMBOL V(BR)CEO V(BR)EBO ICBO IEBO ...