UNISONIC TECHNOLOGIES CO.,LTD 2SC2625
HIGH VOLTAGE HIGH SPEED SWITCHING
FEATURES
* High voltage, high speed switching * ...
UNISONIC TECHNOLOGIES CO.,LTD 2SC2625
HIGH VOLTAGE HIGH SPEED SWITCHING
FEATURES
* High voltage, high speed switching * High reliability
NPN EPITAXIAL SILICON
TRANSISTOR
1
TO-3P
*Pb-free plating product number: 2SC2625L
PIN INFORMATION
PIN NO. 1 2 3 PIN NAME Base Collector Emitter
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ORDERING INFORMATION Order Number Normal Lead free plating
2SC2625-T3P-T 2SC2625L-T3P-T
Package
TO-3P
Packing
Tube
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD
1 of 3
QW-R214-009,B
2SC2625
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25 )
SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A W
ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified)
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO (SUS) VEBO VCE (Sat) VBE (Sat) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20µs, Duty ≤ 2% MIN 450 400 400 7 TYP MAX UNIT V V V V V V mA mA µs µs µs
1.2 1.5 1.0 0.1 10 1.0 2.0 1.0
THERMAL C...