2SC2625

UNISONIC TECHNOLOGIES CO.,LTD 2SC2625 HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability NPN EPITAXIAL SILICON TRANSISTOR 1 TO-3P *Pb-free plating product number: 2SC2625L PIN INFORMATION PIN NO. 1 2 3 PIN NAME Base Collector Emitter www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead free plating 2SC2625-T3P-T 2SC2625L-T3P-T Package TO-3P Packing Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD 1 of 3 QW-R214-009,B 2SC2625 PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A W ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO (SUS) VEBO VCE (Sat) VBE (Sat) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20µs, Duty ≤ 2% MIN 450 400 400 7 TYP MAX UNIT V V V V V V mA mA µs µs µs 1.2 1.5 1.0 0.1 10 1.0 2.0 1.0 THERMAL C...