UNISONIC TECHNOLOGIES CO., LTD
2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
*...
UNISONIC TECHNOLOGIES CO., LTD
2SA1700
PNP EPITAXIAL SILICON
TRANSISTOR
HIGH VOLTAGE DRIVER APPLICATION
FEATURES
* High breakdown voltage. * Excellent hFE linearity.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SA1700L-x-TM3-T
2SA1700G-x-TM3-T
2SA1700L-x-TN3-R
2SA1700G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-251 TO-252
Pin Assignment 123 BCE BCE
Packing
Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R213-011.C
2SA1700
PNP EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
-400 -400
V V
Emitter-Base Voltage Collector Current
VEBO IC
-5 -200
V mA
Collector Current (PULSE) Power Dissipation Junction Temperature
ICP
-400
mA
PD
1 10 (TC=25°C)
W W
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
N...
