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RB520S30T1

ON Semiconductor

Schottky Barrier Diode

RB520S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circ...


ON Semiconductor

RB520S30T1

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Description
RB520S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200 mA Low Reverse Current ESD Rating: Class 3B per Human Body Model Class C per Machine Model These are Pb−Free Devices 30 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current DC Symbol VR IF Value 30 200 Unit Vdc mA 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damagewww.DataSheet4U.com may occur and reliability may be affected. SOD−523 CASE 502 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1. FR−5 Minimum Pad. Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 −55 to +150 Unit mW mW/°C °C/W °C 1 5J M G G MARKING DIAGRAM 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reve...




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