PUMT1

UNISONIC TECHNOLOGIES CO., LTD PUMT1 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION Two independently operating PNP transistors. „ FEATURES * Low Current (Max. -100mA) * Low Voltage (Max. -40V) * Reduces Number of Components and Board Space. * Complement to PUMX1. „ APPLICATIONS *General Purpose Switching and Amplification. „ EQUIVALENT CIRCUIT 6 54 TR2 TR1 123 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free PUMT1L-AL6-R PUMT1G-AL6-R Package SOT-363 Pin Assignment 12 3 4 5 6 E1 B1 C2 E2 B2 C1 Packing Tape Reel „ MARKING 6 54 MT1 123 L:Lead Free G:Halogen Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-001.E PUMT1 PNP SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -50 V -40 V Emitter-Base Voltage Collector Current (DC) VEBO IC -5 -100 V mA Peak Collector Current Peak Base Current ICM -200 mA IBM -200 mA Collector Power Dissipation Junction Temperature PC 200 mW TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Collector Cut-Off Current ICBO IE=0, VCB=-30V IE=0, VCB=-30V, ...