NTGD1100L

MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF Features Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 2000 V These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Input Voltage (VDSS, P−Ch) VIN 8.0 V ON/OFF Voltage (VGS, N−Ch) VON/OFF 8.0 V Continuous Load Current Steady TA = 25°C IL (Note 1) State TA = 85°C ±3.3 A ±2.4 Power Dissipation (Note 1) Steady TA = 25°C PD State TA = 85°C 0.83 W 0.43 Pulsed Load Current tp = 10 ms ILM ±10 A Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 Source Current (Body Diode) ES...