Document
UNISONIC TECHNOLOGIES CO., LTD
2N3904
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
FEATURES
* Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2N3904G-AB3-R
2N3904L-T92-B
2N3904G-T92-B
2N3904L-T92-K
2N3904G-T92-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89 TO-92 TO-92
Pin Assignment 123 BCE EBC EBC
Packing
Tape Reel Tape Box
Bulk
MARKING
SOT-89
TO-92
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
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2N3904
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
60 40
V V
Emitter-Base Voltage Collector Current
VEBO
6
V
IC 200 mA
Collector Dissipation
SOT-89 TO-92
PC
500 625
mW
Junction Temperature Operating and Storage Temperature
TJ TSTG
150 -55 ~ +150
°С °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Ambient
Junction to Case
SOT-89 TO-92 SOT-89 TO-92
SYMBOL θJA
θJC
RATING 200 83.3
UNIT °C/W °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
BVCBO IC=10A, IE=0 BVCEO IC=1mA,IB=0 (Note)
Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note) Collector Cut-off Current
BVEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 VBE(SAT)2
ICBO
IE=10A, IC=0 IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=30V, VEB=3V
Base Cut-off Current
IBL hFE1
VCE=30V, VEB=3V VCE=1V, IC=0.1mA
DC Current Gain (note)
hFE2 hFE3
VCE=1V, IC=1mA VCE=1V, IC=10mA
hFE4 hFE5
VCE=1V, IC=50mA VCE=1V, IC=100mA
Current Gain Bandwidth Product Output Capacitance
fT VCE=20V, IC=10mA, f=100MHz COB VCB=5V, IE=0, f=1MHz
Turn on Time
tON VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA
Turn off Time
tOFF IB1=1B2=1mA
Note: Pulse test: Pulse Width≦300s, Duty Cycle≦2%
MIN 60 40 6
0.65
40 70 100 60 30 300
TYP MAX UNIT V V V
0.2 V 0.3 V 0.85 V 0.95 V 50 nA 50 nA
300
MHz 4 pF 70 ns 250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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DC Current Gain, hFE
2N3904
TYPICAL CHARACTERISTICS
hFE vs. IC 240 200 VCE=1V 160
120 80
40 0 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA)
Current Gain-Bandwidth Product, fT (MHz)
NPN SILICON TRANSISTOR
1000
500 300
fT vs. IC VCE=20V
100 50 30
10 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA)
Capacitance, COB (pF)
Saturation Voltage, VBE(SAT), VCE(SAT)
Voltage, V(V)
Voltage, V(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2N3904
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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