PLB16012U

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Input matching cell allows an easier design of circuits Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. 2 Top view PLB16012U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) 10 Gp (dB) >8 ηC (%) >45 Zi; ZL (Ω) see Figs 5 and 6 PINNING - SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b 3 e MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All per...