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PLB16012U NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Input matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.
2 Top view
PLB16012U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) 10 Gp (dB) >8 ηC (%) >45 Zi; ZL (Ω) see Figs 5 and 6
PINNING - SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
handbook, 4 columns
1
c b
3
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − −65 − −
PLB16012U
MIN.
MAX. 45 15 40 3 0.9 15 +150 200 235
UNIT V V V V A W °C °C °C
MGA242
handbook,20 halfpage
MGA241
handbook,15 halfpage
Ptot (W) 15
PL (W)
10
10
5 5
0 −50
0
50
100
150
200 250 Tmb (oC)
0 0 0.5 1.0 1.5 PIN (W) 2.0
Ptot max = 15 W. VCC = 28 V; f = 1.6 GHz.
Fig.2
Maximum power dissipation derating as a function of mounting base temperature.
Fig.3 Load power as a function of source power.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO PARAMETER collector cut-off current collector cut-off current emitter cut-off current CONDITIONS VCB = 28 V; IE = 0 VCB = 35 V; IE = 0 VCE = 28 V; RBE = 0 Ω VEB = 1.5 V; IC = 0 PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 100 °C
PLB16012U
MAX. 6 0.3
UNIT K/W K/W
thermal resistance from mounting base to heatsink note 1
MAX. 0.3 0.6 0.6 25
UNIT mA mA mA µA
APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common base test circuit as shown in Fig.4 and working in CW class C mode. MODE OF OPERATION Class C (CW) note 1 Class C - 100 ms 50% Note 1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below 1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit. List of components (see Fig.4) COMPONENT L1, L2 C1 C2 C3 C4 DESCRIPTION 5 turns 0.2 mm diameter copper wire DC blocking capacitor feedthrough bypass capacitor trimmer capacitor electrolytic capacitor 0.6 - 4.5 pF 150 µF, 45 V 100 pF Erie, ref.1250-003 AT-3-7-271SL VALUE DIMENSIONS int. dia. = 2 mm CATALOGUE NO. f (GHz) 1.6 1.6 VCC (V) 28 28 PL (W) 10 typ. 15 Gp (dB) ≥8 typ. 9.4 typ. 9.4 ηC (%) ≥45 typ. 60 typ. 60 Zi; ZL (Ω) see Figs 5 and 6
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16012U
handbook, full pagewidth
30 mm
30 mm
7.5 15.5 3 5 5 1.5
5
5
3 1
22 8 40 mm 1.2 5 10 5
8.5 40 mm 1.2
MCD616
handbook, full pagewidth
VCC C4
VCC
C2
input
L1 L2 C1
output
C3
MCD617
Substrate: Teflon fibre glass. Thickness: 0.4 mm. Permittivity: εr = 2.55.
Fig.4 Narrowband test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16012U
1
handbook, full pagewidth
0.5
2
0.2 1.4 +j 0 –j
Zi 1.6
5 10
0.2
1.8 GHz 0.5
1
2
5
10
∞
10 5
0.2
0.