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PLB16012U Dataheets PDF



Part Number PLB16012U
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet PLB16012U DatasheetPLB16012U Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization real.

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. 2 Top view PLB16012U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) 10 Gp (dB) >8 ηC (%) >45 Zi; ZL (Ω) see Figs 5 and 6 PINNING - SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b 3 e MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C CONDITIONS open emitter open base RBE = 0 Ω open collector − − − − − − −65 − − PLB16012U MIN. MAX. 45 15 40 3 0.9 15 +150 200 235 UNIT V V V V A W °C °C °C MGA242 handbook,20 halfpage MGA241 handbook,15 halfpage Ptot (W) 15 PL (W) 10 10 5 5 0 −50 0 50 100 150 200 250 Tmb (oC) 0 0 0.5 1.0 1.5 PIN (W) 2.0 Ptot max = 15 W. VCC = 28 V; f = 1.6 GHz. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. Fig.3 Load power as a function of source power. 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO PARAMETER collector cut-off current collector cut-off current emitter cut-off current CONDITIONS VCB = 28 V; IE = 0 VCB = 35 V; IE = 0 VCE = 28 V; RBE = 0 Ω VEB = 1.5 V; IC = 0 PARAMETER thermal resistance from junction to mounting base CONDITIONS Tj = 100 °C PLB16012U MAX. 6 0.3 UNIT K/W K/W thermal resistance from mounting base to heatsink note 1 MAX. 0.3 0.6 0.6 25 UNIT mA mA mA µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common base test circuit as shown in Fig.4 and working in CW class C mode. MODE OF OPERATION Class C (CW) note 1 Class C - 100 ms 50% Note 1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below 1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit. List of components (see Fig.4) COMPONENT L1, L2 C1 C2 C3 C4 DESCRIPTION 5 turns 0.2 mm diameter copper wire DC blocking capacitor feedthrough bypass capacitor trimmer capacitor electrolytic capacitor 0.6 - 4.5 pF 150 µF, 45 V 100 pF Erie, ref.1250-003 AT-3-7-271SL VALUE DIMENSIONS int. dia. = 2 mm CATALOGUE NO. f (GHz) 1.6 1.6 VCC (V) 28 28 PL (W) 10 typ. 15 Gp (dB) ≥8 typ. 9.4 typ. 9.4 ηC (%) ≥45 typ. 60 typ. 60 Zi; ZL (Ω) see Figs 5 and 6 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor PLB16012U handbook, full pagewidth 30 mm 30 mm 7.5 15.5 3 5 5 1.5 5 5 3 1 22 8 40 mm 1.2 5 10 5 8.5 40 mm 1.2 MCD616 handbook, full pagewidth VCC C4 VCC C2 input L1 L2 C1 output C3 MCD617 Substrate: Teflon fibre glass. Thickness: 0.4 mm. Permittivity: εr = 2.55. Fig.4 Narrowband test circuit. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor PLB16012U 1 handbook, full pagewidth 0.5 2 0.2 1.4 +j 0 –j Zi 1.6 5 10 0.2 1.8 GHz 0.5 1 2 5 10 ∞ 10 5 0.2 0.


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