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PLB16012U NPN microwave power transistor
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
www.DataSheet4U.com
PLB16012U
NPN microwave power
transistor
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Input matching cell allows an easier design of circuits Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.
2 Top view
PLB16012U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) 10 Gp (dB) >8 ηC (%) >45 Zi; ZL (Ω) see Figs 5 and 6
PINNING - SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
handbook, 4 columns
1
c b
3
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All per...