KSA1625

UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc(max)=625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc www.DataSheet4U.com Ic Tj TSTG RATINGS -400 -400 -6 625 -300 150 -55 ~ +150 UNIT V V V mW mA °C °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO hFE TEST CONDITIONS Ic=-100µA,IE=0 Ic=-1mA,IB=0 Ic=-100µA,VBE=0 IE=-100µA,Ic=0 VCB=-300V,IE=0 VCB=-400V,VBE=0 VEB=-4V,Ic=0 VCE=-10V,Ic=-1mA VCE=-10V,Ic=-10mA VCE=-10V,Ic=-50mA VCE=-10V,Ic=-100mA Ic=-10mA,IB=-1mA Ic=-50mA,IB=-5mA Ic=-10mA,IB=-1mA VCB=-20V,IE=0, f=1MHz MIN -400 -400 -400 -5 TYP MAX UNIT V V V V nA µA nA -100 -1 100 60 70 70 40 300 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Output capacit...