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2SD1857 Dataheets PDF



Part Number 2SD1857
Manufacturers UTC
Logo UTC
Description POWER TRANSISTOR
Datasheet 2SD1857 Datasheet2SD1857 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD1857L-x-AA3-R 2SD1857G-x-AA3-R SOT-223 2SD1857L-x-AA3-A-R 2SD1857G-x-AA3-A-R SOT-223 2SD1857L-x-T60-K 2SD1857G-x-T60-K TO-126 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K TO-126S 2SD.

  2SD1857   2SD1857


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UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD1857L-x-AA3-R 2SD1857G-x-AA3-R SOT-223 2SD1857L-x-AA3-A-R 2SD1857G-x-AA3-A-R SOT-223 2SD1857L-x-T60-K 2SD1857G-x-T60-K TO-126 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K TO-126S 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T TO-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B TO-92 2SD1857L-x-T92-K 2SD1857G-x-T92-K TO-92 2SD1857L-x-T9N-B 2SD1857G-x-T9N-B TO-92NL 2SD1857L-x-T9N-K 2SD1857G-x-T9N-K TO-92NL Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 1 2 3 B C E E C B E C B E C B E C B E C B E C B E C B E C B Packing Tape Reel Tape Reel Bulk Bulk Tube Tape Box Bulk Tape Box Bulk www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., LTD 1 of 6 QW-R201-057.M 2SD1857  MARKING PACKAGE SOT-223 TO-251 TO-126 / TO-126C TO-92 TO-92NL NPN EPITAXIAL SILICON TRANSISTOR MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R201-057.M 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SOT-223 SYMBOL VCBO VCEO VEBO RATINGS 120 120 5 1 (Note 2) UNIT V V V W TO-126/TO-126S 1.4 W Collector Power Dissipation TO-92 PC TO-92 NL 0.625 W 0.9 W TO-251 2 W Collector Current Collector Current IC 2 A ICP 3 A Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When mounted on a 40×40×0.7mm ceramic board.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance Note: Measured using pulse current.  CLASSIFICATION OF hFE SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT COB TEST CONDITIONS IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V VCE=5V, IC=0.1A IC=/IB=1A/0.1A (Note) VCE=5V, IE= -0.1A, f=30MHz. VCB=10V, IE=0A, f=1MHz (Note) MIN 120 120 5 82 TYP MAX UNIT V V V 1 µA 1 µA 390 0.4 V 80 MHz 20 pF RANK RANGE P 82-180 Q 120-270 R 180-390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R201-057.M 2SD1857  TYPICAL CHARACTERISTICS NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R201-057.M 2SD1857  TYPICAL CHARACTERISTICS (Cont.) NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R201-057.M .


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