Document
UNISONIC TECHNOLOGIES CO., LTD
2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SD1857L-x-AA3-R
2SD1857G-x-AA3-R
SOT-223
2SD1857L-x-AA3-A-R
2SD1857G-x-AA3-A-R
SOT-223
2SD1857L-x-T60-K
2SD1857G-x-T60-K
TO-126
2SD1857L-x-T6S-K
2SD1857G-x-T6S-K
TO-126S
2SD1857L-x-TM3-T
2SD1857G-x-TM3-T
TO-251
2SD1857L-x-T92-B
2SD1857G-x-T92-B
TO-92
2SD1857L-x-T92-K
2SD1857G-x-T92-K
TO-92
2SD1857L-x-T9N-B
2SD1857G-x-T9N-B
TO-92NL
2SD1857L-x-T9N-K
2SD1857G-x-T9N-K
TO-92NL
Note: Pin Assignment: E: Emitter C: Collector B: Base
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Reel Tape Reel
Bulk Bulk Tube Tape Box Bulk Tape Box Bulk
www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., LTD
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2SD1857
MARKING
PACKAGE SOT-223
TO-251
TO-126 / TO-126C
TO-92
TO-92NL
NPN EPITAXIAL SILICON TRANSISTOR
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SOT-223
SYMBOL VCBO VCEO VEBO
RATINGS 120 120 5
1 (Note 2)
UNIT V V V W
TO-126/TO-126S
1.4
W
Collector Power Dissipation
TO-92
PC
TO-92 NL
0.625
W
0.9
W
TO-251
2
W
Collector Current Collector Current
IC
2
A
ICP
3
A
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When mounted on a 40×40×0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance Note: Measured using pulse current.
CLASSIFICATION OF hFE
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT COB
TEST CONDITIONS IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V VCE=5V, IC=0.1A IC=/IB=1A/0.1A (Note) VCE=5V, IE= -0.1A, f=30MHz. VCB=10V, IE=0A, f=1MHz (Note)
MIN 120 120
5
82
TYP MAX UNIT
V
V
V
1 µA
1 µA
390
0.4 V
80
MHz
20
pF
RANK RANGE
P 82-180
Q 120-270
R 180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD1857
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD1857
TYPICAL CHARACTERISTICS (Cont.)
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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