UNISONIC TECHNOLOGIES CO., LTD
2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER STROBO FLASH
DESCRI...
UNISONIC TECHNOLOGIES CO., LTD
2SC5765
NPN EPITAXIAL SILICON
TRANSISTOR
MEDIUM POWER AMPLIFIER STROBO FLASH
DESCRIPTION
medium power amplifier applications strobo flash applications
FEATURES
* Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC5765L-T9S-K
2SC5765G-T9S-K
TO-92SP
Note: Pin Assignment: E: Emitter C: Collector B: Base
Pin Assignment
1
2
3
E
C
B
Packing Bulk
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 4
QW-R216-002.D
2SC5765
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO
15
V
VCEO
10
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
DC Plused
IC
5
A
9
A
Collector Power Dissipation (Note 2)
PC
550
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When a device is mounted on a glass epoxy board (35 mm×30 mm×1mm)
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage (Note)...