2SC5569

UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. 1 APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25°C Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic www.DataSheet4U.com Icp IB Pc Tj Tstg 2 VALUE 80 50 6 7 10 1.2 1.3* 3.5 150 -55 ~ +150 UNIT V V V A A A W °C °C * Mounted on ceramic board (250mm ×0.8mm) ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg TEST CONDITIONS Ic=10μA,IE=0 Ic=1mA,RBE=∞ IE=10μA,IE=0 VCB=40V,IE=0 VEB=4V,Ic=0 VCE=2V,Ic=500mA Ic=3.5A,IB=175mA Ic=2A,IB=40mA Ic=2A,IB=40mA VCE=10V,Ic=500mA VCB=10V, f=1MHz See specified Test Circuit See specified Test Circuit MIN 80 50 6 TYP M...