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2SC5353 Dataheets PDF



Part Number 2SC5353
Manufacturers UTC
Logo UTC
Description HIGH VOLTAGE NPN TRANSISTOR
Datasheet 2SC5353 Datasheet2SC5353 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 TO-126 1 TO-126C  DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications  FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V 11 TO-220 TO-220F 1 TO-220F1  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC5353L-T60-K 2SC5353G-T60-K 2SC5353L-T6C-K 2.

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UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 TO-126 1 TO-126C  DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications  FEATURES * Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V 11 TO-220 TO-220F 1 TO-220F1  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC5353L-T60-K 2SC5353G-T60-K 2SC5353L-T6C-K 2SC5353G-T6C-K 2SC5353L-TA3-T 2SC5353G-TA3-T 2SC5353L-TF1-T 2SC5353G-TF1-T 2SC5353L-TF3-T 2SC5353G-TF3-T Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-126 TO-126C TO-220 TO-220F1 TO-220F Pin Assignment 123 BCE BCE BCE BCE BCE Packing Bulk Bulk Tube Tube Tube  MARKING TO-126 / TO-126C TO-220 / TO-220F / TO-220F1 www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-031.H 2SC5353 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 700 V 7V Collector Current DC Pulse IC ICP 3 5 A Base Current Collector Power Dissipation TO-220F/ TO-220F1 TO-126/TO-126C IB PD 1A 20 W TO-220 25 Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (Tc=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL TEST CONDITIONS BVCBO IC=1 mA, IE = 0 BVCEO IC=10 mA, IB = 0 ICBO VCB=720V, IE= 0 IEBO VEB=7V, IC= 0 hFE1 VCE=5 V, IC=1 mA hFE2 VCE=5 V, IC=0.15 A VCE(SAT) IC=1.2 A, IB=0.24 A VBE(SAT) IC=1.2 A, IB=0.24 A MIN TYP MAX UNIT 900 V 700 V 100 µA 10 µA 10 15 1.0 V 1.3 V Rise Time tR 0.7 IB1 IB2 300Ω Switching Time Storage Time tSTG µS 4.0 Fall Time Collector Output Capacitance tF Cob VCB= 0V, f=1MHz VCB= 10V, f=1MHz 0.5 86 23.5 pF pF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-031.H 2SC5353  TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Collector Current, IC (A) Collector Current, IC (A) DC Current Gain, hFE DC Current Gain vs. Collector Current 1000 100 TC=100℃ 25 10 -20 Common emitter VCE = 5 V 1 0.001 0.01 0.1 1 Collector Current, IC (A) 10 Collector-Emitter Saturation Voltage, VCE (SAT) (V) Collector-Emitter Saturation Voltage vs. Collector Current 10 Common emitter IC/IB = 3 1 TC=100℃ 0.1 0.05 0.01 25 -20 0.1 1 Collector Current, IC (A) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-031.H 2SC5353  TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR .


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