Document
UNISONIC TECHNOLOGIES CO., LTD
2SC5353
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN TRANSISTOR
1 TO-126
1 TO-126C
DESCRIPTION
Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications
FEATURES
* Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX) * High collectors breakdown voltage: VCEO = 700V
11 TO-220
TO-220F
1 TO-220F1
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC5353L-T60-K
2SC5353G-T60-K
2SC5353L-T6C-K
2SC5353G-T6C-K
2SC5353L-TA3-T
2SC5353G-TA3-T
2SC5353L-TF1-T
2SC5353G-TF1-T
2SC5353L-TF3-T
2SC5353G-TF3-T
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-126 TO-126C TO-220 TO-220F1 TO-220F
Pin Assignment 123 BCE BCE BCE BCE BCE
Packing
Bulk Bulk Tube Tube Tube
MARKING
TO-126 / TO-126C
TO-220 / TO-220F / TO-220F1
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
900 V
Collector-Emitter Voltage Emitter-Base Voltage
VCEO VEBO
700 V 7V
Collector Current
DC Pulse
IC ICP
3 5
A
Base Current Collector Power Dissipation
TO-220F/ TO-220F1 TO-126/TO-126C
IB PD
1A 20 W
TO-220
25
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25°C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SYMBOL
TEST CONDITIONS
BVCBO IC=1 mA, IE = 0
BVCEO IC=10 mA, IB = 0
ICBO VCB=720V, IE= 0
IEBO VEB=7V, IC= 0
hFE1 VCE=5 V, IC=1 mA
hFE2 VCE=5 V, IC=0.15 A
VCE(SAT) IC=1.2 A, IB=0.24 A
VBE(SAT) IC=1.2 A, IB=0.24 A
MIN TYP MAX UNIT 900 V 700 V
100 µA 10 µA 10 15 1.0 V 1.3 V
Rise Time
tR
0.7
IB1 IB2
300Ω
Switching Time Storage Time
tSTG
µS 4.0
Fall Time Collector Output Capacitance
tF
Cob
VCB= 0V, f=1MHz VCB= 10V, f=1MHz
0.5
86 23.5
pF pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, IC (A)
Collector Current, IC (A)
DC Current Gain, hFE
DC Current Gain vs. Collector Current 1000
100 TC=100℃
25 10 -20
Common emitter
VCE = 5 V 1
0.001
0.01
0.1
1
Collector Current, IC (A)
10
Collector-Emitter Saturation Voltage, VCE (SAT) (V)
Collector-Emitter Saturation Voltage vs. Collector Current
10 Common emitter IC/IB = 3
1 TC=100℃
0.1 0.05
0.01
25
-20
0.1 1 Collector Current, IC (A)
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-031.H
2SC5353
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
.