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2SC5027

UTC

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 HIGH VOLTAGE AND HIGH RELIABILITY . NPN SILICON TRANSISTOR FEATURES * High Volt...


UTC

2SC5027

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UNISONIC TECHNOLOGIES CO., LTD 2SC5027 HIGH VOLTAGE AND HIGH RELIABILITY . NPN SILICON TRANSISTOR FEATURES * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220 1 TO-220F *Pb-free plating product number: 2SC5027L ORDERING INFORMATION www.DataSheet4U.com Order Number Normal Lead Free Plating 2SC5027-x-TA3-T 2SC5027L-x-TA3-T 2SC5027-x-TF3-T 2SC5027L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SC5027L-x-TA3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-027,C 2SC5027 ABSOLUTE MAXIMUM RATINGS (Tc = 25 ) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Power Dissipation PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25 , unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vo...




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