UNISONIC TECHNOLOGIES CO., LTD
2SC3838
NPN SILICON TRANSISTOR
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
3
FEATURES
*Hig...
UNISONIC TECHNOLOGIES CO., LTD
2SC3838
NPN SILICON
TRANSISTOR
HIGH-FREQUENCY AMPLIFIER
TRANSISTOR
3
FEATURES
*High transition frequency. *Small rbb’·Cc and high gain. *Small NF.
2 1
SOT-23
3
2 1
SOT-323
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC3838L-x-AE3-R
2SC3838G-x-AE3-R
SOT-23
2SC3838L-x-AL3-R
2SC3838G-x-AL3-R
SOT-323
Note: Pin Assignment: B: Base E: Emitter C: Collector
Pin Assignment 123 BEC BEC
Packing
Tape Reel Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R220-018.D
2SC3838
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage Emitter-Base Voltage
VCEO VEBO
11 3
V V
Collector current Collector power dissipation
IC 50 mA PD 0.2 W
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Ou...
