2SB1132

2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation Junction Temperature, Storage Temperature * Single pulse Pw = 100ms www.DataSheet4U.com Value -40 -32 -5.0 -1.0 -2.0 0.5 150, -55 to +150 Unit Vdc Vdc Vdc A(DC) A (Pulse)* W PC T j , Tstg % C DEVICE MARKING 2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0) Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0) Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC =0) Collector Cutoff Current (VCB= -20Vdc, IE=0) Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -40 -32 -5.0 Max -0.5 -0.5 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2SB1132 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -3 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -50mAdc) Transition Frequency (IC= -50mAdc, VCE=-5 Vdc, f=30MHz) Collector Output Capacitance (IE= 0, VCB=-10 Vdc, f=1MHz) hFE VCE(sat) fT Cob 82 150 20 390 -0.5 Vdc 30 MHz PF CLASSIFICATION OF hFE Rank Range P 82-180 Q 120-270 R 180-390 WEITRON http://www.weitron.com.tw 2...