2SB1116A

UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base Voltage 2SB1116 2SB1116A Collector-Emitter Voltage 2SB1116 2SB1116A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)* Collector Power Dissipation Junction Temperature Storage Temperature *PW≦10ms,Duty Cycle≦50% Vwww.DataSheet4U.com CEO VEBO Ic Icp Pc Tj Tstg -50 -60 -6 -1 -2 0.75 150 -55 ~ +150 V V A A W °C °C VCBO -60 -80 V SYMBOL RATINGS UNIT ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER Collector Cut-off Current Emitter Cut-off current DC Current Gain* 2SB1116 2SB1116A SYMBOL ICBO IEBO hFE1 TEST CONDITIONS VCB=-60V,IE=0 VEB=-6V,Ic=0 VCE=-2V,Ic=-100mA VCE=-2V,Ic=-1A VCE=-2V,Ic=-50mA Ic=-1A,IB=-50mA Ic=-1A,IB=-50mA VCB=-10V,IE=0,f=1MHz VCE=-2V,Ic=-100mA Vcc=-10V,Ic=-100mA IB1=-IB2=-10mA VBE(off)=2 ~ 3V MIN TYP MAX -100 -100 UNIT nA nA hFE2 Base-Emitter On Voltage* VBE(on) Collector-Emitter Saturation Voltage* VCE(sat) Base-Emitter Saturation Voltage* VBE(sat) Output Capacitance Cob Current Gain Bandwidth Product fT Turn On Time tON Storage Time tSTG Fall Time tF *Pulse Test: PW≦350µs, Duty Cycle≦2% 135 135 81 -600 600 400 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 -700 -0.3 -1.2 mV V V pF MHz μs μs μs 70 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-...