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2SB1116A

NEC
Part Number 2SB1116A
Manufacturer NEC
Description PNP SILICON TRANSISTORS
Published Apr 12, 2007
Detailed Description DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MI...
Datasheet PDF File 2SB1116A PDF File

2SB1116A
2SB1116A

Overview
DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.
20 V TYP.
(IC = −1.
0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.
75 W, VCEO = −50/−60 V, IC(DC) = −1.
0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.
...


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