ZXMP6A18K

www.DataSheet4U.com ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. D G S Features Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package Applications Motor drive Disconnect switches Ordering information Device ZXMP6A18KTC Reel size (inches) 13 Tape width 16mm Quantity per reel Pinout - Top view 2500 units Device marking ZXMP 6A18 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMP6A18K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @VGS=10V; TA=25°C (b) @VGS=10V; TA=70°C (b) @VGS=10V; TA=25°C (a) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) Linear derating factor Power dissipation at TA =25°C (d) Linear derating factor Operating and storage temperature range IDM IS ISM PD ID -10.4 -8.3 -6.8 -37.5 -11.5 -37.5 4.3 34.4 10.1 80.8 2.15 17.2 -55 to +150 A A A A A A W mW/°C W mW/°C W mW/°C °C Symbol VDSS VGS Limit -60 ±20 Unit V V PD PD Tj:Tstg Thermal resistance Parameter Junction to ambient (a) Jun...