UNISONIC TECHNOLOGIES CO., LTD
UN1066
NPN SILICON TRANSISTOR
HIGH SPEED SWITCHING TRANSISTOR
FEATURES
* Low VCE(SA...
UNISONIC TECHNOLOGIES CO., LTD
UN1066
NPN SILICON
TRANSISTOR
HIGH SPEED SWITCHING
TRANSISTOR
FEATURES
* Low VCE(SAT) voltage, up to 3A * Suitable for fast switching applications * High current gain
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
-
UN1066G-AB3-R
SOT-89
UN1066L-TN3-R
UN1066G-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment 123 BCE BCE
Packing
Tape Reel Tape Reel
MARKING
SOT-89
TO-252
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-023.D
UN1066
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage Emitter to Base Voltage
BVCEO BVEBO
15 5
V V
Collector Current Collector Current (Pulse)
IC 6 A ICP 9 A
Base Current Collector Dissipation (TC=25°C)
IB 600 mA PC 3.5 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector ...
