MRF6S24140HSR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain — 13.2 dB Drain Efficiency — 45% Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S24140HR3 MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S24140HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S24140HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82°C, 140 W CW Case Temperature 75°C, 28 W CW Symbol RθJC Value (1,2) 0.29 0.33 Unit °C/W 1. MTTF calculator available ...